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Filtros : "Alzeidan, Ahmad" Limpar

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1 - 13 (13 records)

  • Artigo de periodico

    Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction (2023)

    Santos, Thales Borrely dos ; Alzeidan, Ahmad ; Lima, Marcelo Delmondes de; Jacobsen, Gabriel Marques ; Huang, T Y; Yang, Y C; Cantalice, Tiago Fernandes de ; Goldman, R S; Teodoro, M D; Quivy, Alain André

    Source: Solar Energy Materials and Solar Cells. Unidade: IF

    Assunto: EPITAXIA POR FEIXE MOLECULAR

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    • ABNT

      SANTOS, Thales Borrely dos et al. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction. Solar Energy Materials and Solar Cells, v. 254, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.solmat.2023.112281. Acesso em: 28 abr. 2024.

    • APA

      Santos, T. B. dos, Alzeidan, A., Lima, M. D. de, Jacobsen, G. M., Huang, T. Y., Yang, Y. C., et al. (2023). Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction. Solar Energy Materials and Solar Cells, 254. doi:10.1016/j.solmat.2023.112281

    • NLM

      Santos TB dos, Alzeidan A, Lima MD de, Jacobsen GM, Huang TY, Yang YC, Cantalice TF de, Goldman RS, Teodoro MD, Quivy AA. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction [Internet]. Solar Energy Materials and Solar Cells. 2023 ; 254[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.solmat.2023.112281

    • Vancouver

      Santos TB dos, Alzeidan A, Lima MD de, Jacobsen GM, Huang TY, Yang YC, Cantalice TF de, Goldman RS, Teodoro MD, Quivy AA. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction [Internet]. Solar Energy Materials and Solar Cells. 2023 ; 254[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.solmat.2023.112281

  • Trabalho de evento

    Influence of the InAs coverage on the performance of submonolayer-quantum-dot infrared photodetectors grown with a (2×4) surface reconstruction (2022)

    Alzeidan, Ahmad; Cantalice, Tiago Fernandes de ; Vallejo, Kevin. D; Simmonds, Paul J; Quivy, Alain André

    Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: IF

    Assunto: EPITAXIA POR FEIXE MOLECULAR

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    • ABNT

      ALZEIDAN, Ahmad et al. Influence of the InAs coverage on the performance of submonolayer-quantum-dot infrared photodetectors grown with a (2×4) surface reconstruction. 2022, Anais.. New York: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMicro50945.2021.9585765. Acesso em: 28 abr. 2024.

    • APA

      Alzeidan, A., Cantalice, T. F. de, Vallejo, K. D., Simmonds, P. J., & Quivy, A. A. (2022). Influence of the InAs coverage on the performance of submonolayer-quantum-dot infrared photodetectors grown with a (2×4) surface reconstruction. In . New York: IEEE. doi:10.1109/SBMicro50945.2021.9585765

    • NLM

      Alzeidan A, Cantalice TF de, Vallejo KD, Simmonds PJ, Quivy AA. Influence of the InAs coverage on the performance of submonolayer-quantum-dot infrared photodetectors grown with a (2×4) surface reconstruction [Internet]. 2022 ;[citado 2024 abr. 28 ] Available from: https://doi.org/10.1109/SBMicro50945.2021.9585765

    • Vancouver

      Alzeidan A, Cantalice TF de, Vallejo KD, Simmonds PJ, Quivy AA. Influence of the InAs coverage on the performance of submonolayer-quantum-dot infrared photodetectors grown with a (2×4) surface reconstruction [Internet]. 2022 ;[citado 2024 abr. 28 ] Available from: https://doi.org/10.1109/SBMicro50945.2021.9585765

  • Trabalho de evento-resumo

    INFLUENCE OF THE ARSENIC FLUX ON THE PERFORMANCE OF INFRARED PHOTODETECTORS BASED ON InAs SUBMONOLAYER QUANTUM DOTS (2022)

    Alzeidan, Ahmad ; Cantalice, Tiago Fernandes de ; Quivy, Alain André

    Source: Resumos. Conference titles: Encontro de Outono da Sociedade Brasileira de Física. Unidade: IF

    Subjects: FOTODETECTORES, ARSÊNIO

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    • ABNT

      ALZEIDAN, Ahmad e CANTALICE, Tiago Fernandes de e QUIVY, Alain André. INFLUENCE OF THE ARSENIC FLUX ON THE PERFORMANCE OF INFRARED PHOTODETECTORS BASED ON InAs SUBMONOLAYER QUANTUM DOTS. 2022, Anais.. São Paulo: Sociedade Brasileira de Física, 2022. . Acesso em: 28 abr. 2024.

    • APA

      Alzeidan, A., Cantalice, T. F. de, & Quivy, A. A. (2022). INFLUENCE OF THE ARSENIC FLUX ON THE PERFORMANCE OF INFRARED PHOTODETECTORS BASED ON InAs SUBMONOLAYER QUANTUM DOTS. In Resumos. São Paulo: Sociedade Brasileira de Física.

    • NLM

      Alzeidan A, Cantalice TF de, Quivy AA. INFLUENCE OF THE ARSENIC FLUX ON THE PERFORMANCE OF INFRARED PHOTODETECTORS BASED ON InAs SUBMONOLAYER QUANTUM DOTS. Resumos. 2022 ;[citado 2024 abr. 28 ]

    • Vancouver

      Alzeidan A, Cantalice TF de, Quivy AA. INFLUENCE OF THE ARSENIC FLUX ON THE PERFORMANCE OF INFRARED PHOTODETECTORS BASED ON InAs SUBMONOLAYER QUANTUM DOTS. Resumos. 2022 ;[citado 2024 abr. 28 ]

  • Trabalho de evento

    Capping of InAs quantum dots by migration enhanced epitaxy (2022)

    Curbelo, Victor Manuel Orlando; Alzeidan, Ahmad; Quivy, Alain André

    Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: IF

    Assunto: EPITAXIA POR FEIXE MOLECULAR

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    • ABNT

      CURBELO, Victor Manuel Orlando e ALZEIDAN, Ahmad e QUIVY, Alain André. Capping of InAs quantum dots by migration enhanced epitaxy. 2022, Anais.. New York: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881016. Acesso em: 28 abr. 2024.

    • APA

      Curbelo, V. M. O., Alzeidan, A., & Quivy, A. A. (2022). Capping of InAs quantum dots by migration enhanced epitaxy. In . New York: IEEE. doi:10.1109/SBMICRO55822.2022.9881016

    • NLM

      Curbelo VMO, Alzeidan A, Quivy AA. Capping of InAs quantum dots by migration enhanced epitaxy [Internet]. 2022 ;[citado 2024 abr. 28 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881016

    • Vancouver

      Curbelo VMO, Alzeidan A, Quivy AA. Capping of InAs quantum dots by migration enhanced epitaxy [Internet]. 2022 ;[citado 2024 abr. 28 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881016

  • Artigo de periodico

    Evidence of weak strain field in InAs/GaAs submonolayer quantum dots (2022)

    Cantalice, Tiago Fernandes de ; Alzeidan, Ahmad ; Jacobsen, G M ; Santos, Thales Borrely dos ; Teodoro, M D ; Quivy, Alain André

    Source: Micro and Nanostructures. Unidade: IF

    Assunto: POÇOS QUÂNTICOS

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    • ABNT

      CANTALICE, Tiago Fernandes de et al. Evidence of weak strain field in InAs/GaAs submonolayer quantum dots. Micro and Nanostructures, v. 172, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.micrna.2022.207449. Acesso em: 28 abr. 2024.

    • APA

      Cantalice, T. F. de, Alzeidan, A., Jacobsen, G. M., Santos, T. B. dos, Teodoro, M. D., & Quivy, A. A. (2022). Evidence of weak strain field in InAs/GaAs submonolayer quantum dots. Micro and Nanostructures, 172. doi:10.1016/j.micrna.2022.207449

    • NLM

      Cantalice TF de, Alzeidan A, Jacobsen GM, Santos TB dos, Teodoro MD, Quivy AA. Evidence of weak strain field in InAs/GaAs submonolayer quantum dots [Internet]. Micro and Nanostructures. 2022 ; 172[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.micrna.2022.207449

    • Vancouver

      Cantalice TF de, Alzeidan A, Jacobsen GM, Santos TB dos, Teodoro MD, Quivy AA. Evidence of weak strain field in InAs/GaAs submonolayer quantum dots [Internet]. Micro and Nanostructures. 2022 ; 172[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.micrna.2022.207449

  • Artigo de periodico

    Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots (2022)

    Gajjela, Raja Sekhar Reddy ; Alzeidan, Ahmad ; Curbelo, Victor Manuel Orlando ; Quivy, Alain André ; koenraad, Paul M

    Source: Physical Review Materials. Unidade: IF

    Assunto: MICROSCOPIA DE FORÇA ATÔMICA

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    • ABNT

      GAJJELA, Raja Sekhar Reddy et al. Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots. Physical Review Materials, v. 6, 2022Tradução . . Disponível em: https://doi.org/10.1103/PhysRevMaterials.6.114604. Acesso em: 28 abr. 2024.

    • APA

      Gajjela, R. S. R., Alzeidan, A., Curbelo, V. M. O., Quivy, A. A., & koenraad, P. M. (2022). Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots. Physical Review Materials, 6. doi:10.1103/PhysRevMaterials.6.114604

    • NLM

      Gajjela RSR, Alzeidan A, Curbelo VMO, Quivy AA, koenraad PM. Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots [Internet]. Physical Review Materials. 2022 ; 6[citado 2024 abr. 28 ] Available from: https://doi.org/10.1103/PhysRevMaterials.6.114604

    • Vancouver

      Gajjela RSR, Alzeidan A, Curbelo VMO, Quivy AA, koenraad PM. Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots [Internet]. Physical Review Materials. 2022 ; 6[citado 2024 abr. 28 ] Available from: https://doi.org/10.1103/PhysRevMaterials.6.114604

  • Trabalho de evento-resumo

    ON THE RELATION BETWEEN GROWTH, QUANTUM-DOT MORPHOLOGY, OPTOELECTRONIC PROPERTIES, AND PERFORMANCE IN InAs/GaAs QUANTUM DOT INTERMEDIATE BAND SOLAR CELL (2022)

    Santos, Thales Borrely dos ; Alzeidan, Ahmad ; Quivy, Alain André ; Jacobsen, Gabriel Marques ; Teodoro, M D ; Gajjela, Raja Sekhar Reddy ; Hendriks, A L; Koenraad, P M

    Source: Resumos. Conference titles: Encontro de Outono da Sociedade Brasileira de Física. Unidade: IF

    Assunto: ÓPTICA ELETRÔNICA

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    • ABNT

      SANTOS, Thales Borrely dos et al. ON THE RELATION BETWEEN GROWTH, QUANTUM-DOT MORPHOLOGY, OPTOELECTRONIC PROPERTIES, AND PERFORMANCE IN InAs/GaAs QUANTUM DOT INTERMEDIATE BAND SOLAR CELL. 2022, Anais.. São Paulo: Sociedade Brasileira de Física, 2022. . Acesso em: 28 abr. 2024.

    • APA

      Santos, T. B. dos, Alzeidan, A., Quivy, A. A., Jacobsen, G. M., Teodoro, M. D., Gajjela, R. S. R., et al. (2022). ON THE RELATION BETWEEN GROWTH, QUANTUM-DOT MORPHOLOGY, OPTOELECTRONIC PROPERTIES, AND PERFORMANCE IN InAs/GaAs QUANTUM DOT INTERMEDIATE BAND SOLAR CELL. In Resumos. São Paulo: Sociedade Brasileira de Física.

    • NLM

      Santos TB dos, Alzeidan A, Quivy AA, Jacobsen GM, Teodoro MD, Gajjela RSR, Hendriks AL, Koenraad PM. ON THE RELATION BETWEEN GROWTH, QUANTUM-DOT MORPHOLOGY, OPTOELECTRONIC PROPERTIES, AND PERFORMANCE IN InAs/GaAs QUANTUM DOT INTERMEDIATE BAND SOLAR CELL. Resumos. 2022 ;[citado 2024 abr. 28 ]

    • Vancouver

      Santos TB dos, Alzeidan A, Quivy AA, Jacobsen GM, Teodoro MD, Gajjela RSR, Hendriks AL, Koenraad PM. ON THE RELATION BETWEEN GROWTH, QUANTUM-DOT MORPHOLOGY, OPTOELECTRONIC PROPERTIES, AND PERFORMANCE IN InAs/GaAs QUANTUM DOT INTERMEDIATE BAND SOLAR CELL. Resumos. 2022 ;[citado 2024 abr. 28 ]

  • Trabalho de evento-resumo

    IMPROVEMENT OF InAs QUANTUM DOTS USING MIGRATION ENHANCED EPITAXY (2022)

    Curbelo, Victor Manuel Orlando ; Alzeidan, Ahmad ; Quivy, Alain André

    Source: Resumos. Conference titles: Encontro de Outono da Sociedade Brasileira de Física. Unidade: IF

    Assunto: FOTOLUMINESCÊNCIA

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    • ABNT

      CURBELO, Victor Manuel Orlando e ALZEIDAN, Ahmad e QUIVY, Alain André. IMPROVEMENT OF InAs QUANTUM DOTS USING MIGRATION ENHANCED EPITAXY. 2022, Anais.. São Paulo: Sociedade Brasileira de Física, 2022. . Acesso em: 28 abr. 2024.

    • APA

      Curbelo, V. M. O., Alzeidan, A., & Quivy, A. A. (2022). IMPROVEMENT OF InAs QUANTUM DOTS USING MIGRATION ENHANCED EPITAXY. In Resumos. São Paulo: Sociedade Brasileira de Física.

    • NLM

      Curbelo VMO, Alzeidan A, Quivy AA. IMPROVEMENT OF InAs QUANTUM DOTS USING MIGRATION ENHANCED EPITAXY. Resumos. 2022 ;[citado 2024 abr. 28 ]

    • Vancouver

      Curbelo VMO, Alzeidan A, Quivy AA. IMPROVEMENT OF InAs QUANTUM DOTS USING MIGRATION ENHANCED EPITAXY. Resumos. 2022 ;[citado 2024 abr. 28 ]

  • Relatorio tecnico

    Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots (2020)

    Gajjela, R.S.R. ; Hendriks, A. L.; Koenraad, P M; Alzeidan, Ahmad; Cantalice, Tiago Fernandes de; Quivy, Alain André

    Unidade: IF

    Subjects: FÍSICA DA MATÉRIA CONDENSADA, FÍSICA MODERNA, MICROSCOPIA DE FORÇA ATÔMICA, SUPERFÍCIES, ÍNDIO (ELEMENTO QUÍMICO), ARSÊNIO

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    • ABNT

      GAJJELA, R.S.R. et al. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/2008.11711.pdf. Acesso em: 28 abr. 2024. , 2020

    • APA

      Gajjela, R. S. R., Hendriks, A. L., Koenraad, P. M., Alzeidan, A., Cantalice, T. F. de, & Quivy, A. A. (2020). Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/2008.11711.pdf

    • NLM

      Gajjela RSR, Hendriks AL, Koenraad PM, Alzeidan A, Cantalice TF de, Quivy AA. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots [Internet]. 2020 ;[citado 2024 abr. 28 ] Available from: https://arxiv.org/pdf/2008.11711.pdf

    • Vancouver

      Gajjela RSR, Hendriks AL, Koenraad PM, Alzeidan A, Cantalice TF de, Quivy AA. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots [Internet]. 2020 ;[citado 2024 abr. 28 ] Available from: https://arxiv.org/pdf/2008.11711.pdf

  • Artigo de periodico

    High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction (2019)

    Alzeidan, Ahmad; Claro, M S; Quivy, Alain André

    Source: Journal of Applied Physics. Unidade: IF

    Assunto: FOTODETECTORES

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    • ABNT

      ALZEIDAN, Ahmad e CLARO, M S e QUIVY, Alain André. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Journal of Applied Physics, v. 126, p. 224506(6), 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5125238. Acesso em: 28 abr. 2024.

    • APA

      Alzeidan, A., Claro, M. S., & Quivy, A. A. (2019). High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Journal of Applied Physics, 126, 224506(6). doi:10.1063/1.5125238

    • NLM

      Alzeidan A, Claro MS, Quivy AA. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction [Internet]. Journal of Applied Physics. 2019 ; 126 224506(6).[citado 2024 abr. 28 ] Available from: https://doi.org/10.1063/1.5125238

    • Vancouver

      Alzeidan A, Claro MS, Quivy AA. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction [Internet]. Journal of Applied Physics. 2019 ; 126 224506(6).[citado 2024 abr. 28 ] Available from: https://doi.org/10.1063/1.5125238

  • Artigo de periodico

    In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots (2019)

    Cantalice, Tiago Fernandes de ; Alzeidan, Ahmad; Urahata, Sergio Minoru; Quivy, Alain André

    Source: Materials Research Express. Unidades: IF, ICMC

    Assunto: ELÉTRONS

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    • ABNT

      CANTALICE, Tiago Fernandes de et al. In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots. Materials Research Express, v. 6 p. 126205(6), 2019Tradução . . Disponível em: https://doi.org/10.1088/2053-1591/ab55a8. Acesso em: 28 abr. 2024.

    • APA

      Cantalice, T. F. de, Alzeidan, A., Urahata, S. M., & Quivy, A. A. (2019). In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots. Materials Research Express, 6 p. 126205(6). doi:10.1088/2053-1591/ab55a8

    • NLM

      Cantalice TF de, Alzeidan A, Urahata SM, Quivy AA. In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots [Internet]. Materials Research Express. 2019 ;6 p. 126205(6)[citado 2024 abr. 28 ] Available from: https://doi.org/10.1088/2053-1591/ab55a8

    • Vancouver

      Cantalice TF de, Alzeidan A, Urahata SM, Quivy AA. In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots [Internet]. Materials Research Express. 2019 ;6 p. 126205(6)[citado 2024 abr. 28 ] Available from: https://doi.org/10.1088/2053-1591/ab55a8

  • Trabalho de evento-resumo

    Growth of a submonolayer quantum dot infrared photodetector in the presence of a c(4x4) surface reconstruction (2019)

    Cantalice, Tiago Fernandes de; Alzeidan, Ahmad; Quivy, Alain André; Garcia Jr., Ailton J ; Deneke, Christoph

    Source: Abstracts. Conference titles: Encontro de Outono da Sociedade Brasileira de Física - EOSBF. Unidade: IF

    Assunto: FOTODETECTORES

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    • ABNT

      CANTALICE, Tiago Fernandes de et al. Growth of a submonolayer quantum dot infrared photodetector in the presence of a c(4x4) surface reconstruction. 2019, Anais.. São Paulo: Sociedade Brasileira de Física - SBF, 2019. Disponível em: https://repositorio.usp.br/directbitstream/c6952059-c7b7-4708-bfc2-1332528d922f/Encontro%20de%20Outono%20da%20SBF%202019.pdf. Acesso em: 28 abr. 2024.

    • APA

      Cantalice, T. F. de, Alzeidan, A., Quivy, A. A., Garcia Jr., A. J., & Deneke, C. (2019). Growth of a submonolayer quantum dot infrared photodetector in the presence of a c(4x4) surface reconstruction. In Abstracts. São Paulo: Sociedade Brasileira de Física - SBF. Recuperado de https://repositorio.usp.br/directbitstream/c6952059-c7b7-4708-bfc2-1332528d922f/Encontro%20de%20Outono%20da%20SBF%202019.pdf

    • NLM

      Cantalice TF de, Alzeidan A, Quivy AA, Garcia Jr. AJ, Deneke C. Growth of a submonolayer quantum dot infrared photodetector in the presence of a c(4x4) surface reconstruction [Internet]. Abstracts. 2019 ;[citado 2024 abr. 28 ] Available from: https://repositorio.usp.br/directbitstream/c6952059-c7b7-4708-bfc2-1332528d922f/Encontro%20de%20Outono%20da%20SBF%202019.pdf

    • Vancouver

      Cantalice TF de, Alzeidan A, Quivy AA, Garcia Jr. AJ, Deneke C. Growth of a submonolayer quantum dot infrared photodetector in the presence of a c(4x4) surface reconstruction [Internet]. Abstracts. 2019 ;[citado 2024 abr. 28 ] Available from: https://repositorio.usp.br/directbitstream/c6952059-c7b7-4708-bfc2-1332528d922f/Encontro%20de%20Outono%20da%20SBF%202019.pdf

  • Trabalho de evento-resumo

    Infrared photodetectors based on submonolayer quantum dots (2016)

    Alzeidan, Ahmad; Claro, Marcel Santos; Quivy, Alain Andre

    Source: Posters - Resumo. Conference titles: Encontro de Física. Unidade: IF

    Subjects: FÍSICA DA MATÉRIA CONDENSADA, FOTODETECTORES, POÇOS QUÂNTICOS

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    • ABNT

      ALZEIDAN, Ahmad e CLARO, Marcel Santos e QUIVY, Alain Andre. Infrared photodetectors based on submonolayer quantum dots. 2016, Anais.. São Paulo: SBF, 2016. Disponível em: http://www1.sbfisica.org.br/eventos/enf/2016/sys/resumos/R1690-1.pdf. Acesso em: 28 abr. 2024.

    • APA

      Alzeidan, A., Claro, M. S., & Quivy, A. A. (2016). Infrared photodetectors based on submonolayer quantum dots. In Posters - Resumo. São Paulo: SBF. Recuperado de http://www1.sbfisica.org.br/eventos/enf/2016/sys/resumos/R1690-1.pdf

    • NLM

      Alzeidan A, Claro MS, Quivy AA. Infrared photodetectors based on submonolayer quantum dots [Internet]. Posters - Resumo. 2016 ;[citado 2024 abr. 28 ] Available from: http://www1.sbfisica.org.br/eventos/enf/2016/sys/resumos/R1690-1.pdf

    • Vancouver

      Alzeidan A, Claro MS, Quivy AA. Infrared photodetectors based on submonolayer quantum dots [Internet]. Posters - Resumo. 2016 ;[citado 2024 abr. 28 ] Available from: http://www1.sbfisica.org.br/eventos/enf/2016/sys/resumos/R1690-1.pdf
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